TC4432 datasheet(3/14 Pages) MICROCHIP

3 / 14 page

 2002 Microchip Technology Inc.

DS21424B-page 3

TC4431/TC4432

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Supply Voltage....................................................... 36V

Input Voltage (Note 1)....................VDD + 0.3V to GND

Package Power Dissipation (TA ≤ 70°C)

PDIP ........................................................ 730mW

CERDIP ................................................... 800mW

SOIC........................................................ 470mW

Package Thermal Resistance

CERDIP RθJ-A........................................ 150°C/W

CERDIP RθJ-C ......................................... 50°C/W

PDIP RθJ-A............................................. 125°C/W

PDIP RθJ-C............................................... 42°C/W

SOIC RθJ-A ............................................ 250°C/W

SOIC RθJ-C .............................................. 75°C/W

Operating Temperature Range

C Version .........................................0°C to +70°C

E Version ..................................... -40°C to +85°C

Storage Temperature Range ............. -65°C to +150°C

*Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

TC4431/TC4432 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: TA = +25°C, with 4.5V ≤ VDD ≤ 30V, unless otherwise noted..

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

Input

VIH

Logic 1, High Input Voltage

2.4

——

VIL

Logic 0, Low Input Voltage

——

0.8

IIN

Input Current (Note 1)

-1

—

µA0V ≤ VIN ≤ 12V

Output

VOH

High Output Voltage

VDD – 1.0

VDD – 0.8

—

VIOUT = 100mA

VOL

Low Output Voltage

——

0.025

Output Resistance

—

710

Ω

IOUT = 10mA, VDD = 30V

IPK

Peak Output Current

—

3.0

1.5

—

Source: VDD = 30V

Sink: VDD = 30V

IREV

Latch-Up Protection

Withstand Reverse Current

0.3

——

Duty cycle

≤ 2%, t ≤ 300µsec

Switching Time (Note 2)

Rise Time

—

nsec

Figure 3-1

Fall Time

—

nsec

Figure 3-1

tD1

Delay Time

—

nsec

Figure 3-1

tD2

Delay Time

—

nsec

Figure 3-1

Power Supply

Power Supply Current

—

2.5

0.3

0.4

VIN = 3V

VIN = 0V

Start-up Threshold

—

8.4

VDO

Drop-out Threshold

7.7

—

Note 3

Note

For inputs >12V, add a 1k

Ω resistor in series with the input. See “Typical Characteristics” graph for input current.

Switching times are ensured by design.

For operation below 7V, pin 3 (LOCK DIS) should be tied to ground to disable the lockout and start-up circuit, otherwise, pin 3 must be left

floating.

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