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6N10L-TND-R Datasheet(PDF) 3 Page - Unisonic Technologies

Part # 6N10L-TND-R
Description  N-CHANNEL POWER MOSFET
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

6N10L-TND-R Datasheet(HTML) 3 Page - Unisonic Technologies

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6N10
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-486.E
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
100
V
Drain-Source Leakage Current
IDSS
VDS=100V, VGS=0V
1
µA
VDS=100V, VGS=0V, TJ=125°C
50
µA
VDS=100V, VGS=0V, TJ=150°C
250
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100
nA
Reverse
VGS=-20V, VDS=0V
-100
nA
On-State Drain Current (Note 2)
ID(on)
VDS=5V, VGS=10V
8.0
A
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.0
3.0
V
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=10V, ID=3A
0.150 0.200
Ω
VGS=10V, ID=3A, TJ=125°C
0.350
VGS=10V, ID=3A, TJ=150°C
0.450
VGS=4.5V, ID=1.0A
0.160 0.225
Forward Transconductance (Note 2)
gFS
VDS=15V, ID=3A
8.5
S
DYNAMIC PARAMETERS
(Note1)
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
320
pF
Output Capacitance
COSS
80
pF
Reverse Transfer Capacitance
CRSS
17
pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note3)
tD(ON)
VDD=30V, RL=7.5Ω, ID=0.5A,
VGEN=10V, RG=25 Ω
28
58
ns
Rise Time (Note 3)
tR
30
60
ns
Turn-OFF Delay Time (Note 3)
tD(OFF)
148
178
ns
Fall-Time (Note 3)
tF
52
82
ns
Total Gate Charge (Note 3)
QG
VDS=50V, VGS=10V, ID=1.3A
IG=100µA
27
75
nC
Gate to Source Charge (Note 3)
QGS
2.4
nC
Gate to Drain Charge (Note 3)
QGD
6.8
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
(TC=25°C)
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
8.0
A
Drain-Source Diode Forward Voltage (Note 2)
VSD
IF=6.5A, VGS=0V
0.9
1.3
V
Reverse Recovery Time
tRR
IF=6.5A, di/dt=100A/µs
35
60
ns
Notes: 1. Guaranteed by design, not subject to production testing.
2. Pulse test; pulse width ≤300 ≤μs, duty cycle ≤2%.
3. Independent of operating temperature.



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