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UF640G-AA3-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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UF640G-AA3-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page  UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-066.I 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant and PWM converter topologies. FEATURES * RDS(ON) < 0.18Ω @ VGS=10V, ID=10A * Ultra Low gate charge (typical 43nC) * Low reverse transfer capacitance (CRSS = typical 100 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL |
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