4N50G-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

4N50

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-525.E



ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

500

Gate-Source Voltage

VGSS

±30

Drain Current

Continuous (TC=25°C)

Pulsed (Note 3)

IDM

16 (Note 2)

Avalanche Current (Note 3)

IAR

Avalanche Energy

Single Pulsed (Note 4)

EAS

216

Repetitive (Note 3)

EAR

8.5

Peak Diode Recovery dv/dt (Note 5)

dv/dt

4.5

V/ns

Power Dissipation

TO-220

TO-220F

TO-251/TO-252

Derate above 25°C

TO-220

0.67

W/°C

TO-220F

0.22

TO-251/TO-252

0.41

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating: Pulse width limited by maximum junction temperature

4. L = 27mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

5. ISD ≤ 4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

θJA

62.5

°C/W

TO-220F

62.5

TO-251/TO-252

110

Junction to Case

TO-220

θJC

1.47

°C/W

TO-220F

4.5

TO-251/TO-252

2.4

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