5N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-065.M



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

5

A

Continuous Drain Current

5

A

Pulsed Drain Current (Note 2)

20

A

Avalanche Energy

Single Pulsed (Note 3)

210

mJ

Repetitive (Note 2)

10

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220

100

W

TO-220F/TO-220F1

TO-220F3

36

TO-220F2

38

TO-251 / TO-252

54

DFN-8(5×6)

28

Junction Temperature

+150

°C

Operation Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1.

2.

3.

4.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F

TO-220F1/ TO-220F2

TO-220F3

62.5

°C/W

TO-251 / TO-252

160

DFN-8(5×6)

75

Junction to Case

TO-220

1.25

°C/W

TO-220F/TO-220F1

TO-220F3

3.47

TO-220F2

3.28

TO-251 / TO-252

2.3

DFN-8(5×6)

4.46