5N90

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-499.H

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

900

V

Gate-Source Voltage

±30

V

Drain Current

Continuous

5

A

Pulsed (Note 2)

12

A

Avalanche Energy

Single Pulsed (Note 3)

350

mJ

Repetitive (Note 2)

5.1

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.0

V/ns

Power Dissipation

TO-220/TO-262/TO-263

125

W

TO-220F/TO-220F1

47

TO-3P

240

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F

TO-220F1/TO-262

TO-263

62.5

°C/W

TO-3P

40

Junction to Case

TO-220/TO-262

TO-263

1

°C/W

TO-220F/TO-220F1

3.66

TO-3P

0.52