UTT30NP30L-TN4-R datasheet(4/5 Pages) UTC

4 / 5 page

UTT30NP30

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 5

www.unisonic.com.tw

QW-R502-A40.b



ELECTRICAL CHARACTERISTICS(Cont.)

P-Channel

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=-250µA

-25

Drain-Source Leakage Current

IDSS

VDS=-24V, VGS=0V, TJ=25°C

-1.0

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+25V, VGS=0V

+100

Reverse

VGS=-25V, VGS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-1

-1.5

-3

Static Drain-Source On-State Resistance

(Note 2)

RDS(ON)

VGS=-10V, ID=-30A

mΩ

VGS=-4.5V, ID=-30A

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=-15V, f=1.0MHz

1500

Output Capacitance

COSS

270

Reverse Transfer Capacitance

CRSS

230

SWITCHING PARAMETERS

Total Gate Charge (Note 2)

VGS=-10V, VDS=-20V, ID=-30A

140

160

Gate to Source Charge

QGS

5.4

Gate to Drain Charge

QGD

8.7

Turn-ON Delay Time (Note 2)

tD(ON)

VDS= -12.5V, ID= -1A

VGS= -10V, RG=3.3Ω

Rise Time

Turn-OFF Delay Time

tD(OFF)

308

330

Fall-Time

173

220

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note 2)

VSD

IS= -30A

-1.2

Notes: 1. Pulse Test: Pulse width limited by Max. junction temperature.

2. N-CH, P-

≦

CH are same, mounted on 2oz FR4 board t 10s.

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