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UOT406G-AA3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UOT406G-AA3-R
Description  ENHANCED NOISE IMMUNITY
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UOT406G-AA3-R Datasheet(HTML) 2 Page - Unisonic Technologies

  UOT406G-AA3-R Datasheet HTML 1Page - Unisonic Technologies UOT406G-AA3-R Datasheet HTML 2Page - Unisonic Technologies UOT406G-AA3-R Datasheet HTML 3Page - Unisonic Technologies  
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UOT406
Preliminary
TRIAC
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
VER.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Off-State Voltage
VDRM
600
V
Repetitive Peak Reverse Voltage
VRRM
600
V
RMS On-State Current
full sine wave, Tsp≤103°C
IT(RMS)
1
A
Non-Repetitive Peak On-State
Current
full sine wave,
TJ≤25°C prior to
surge
t=20ms
ITSM
12.5
A
t=16.7ms
13.8
A
I
2t for Fusing
tp=10ms
I
2t
1.28
A
2s
Rate of Rise of On-State Current
ITM=1A, IG=20mA,
dIG/dt=0.2A/µs
T2+G+
dIT/dt
50
A/µs
T2+G-
50
A/µs
T2-G-
50
A/µs
T2-G+
10
A/µs
Peak Gate Current
IGM
1
A
Peak Gate Power
PGM
2
W
Average Gate Power
Over any 20ms period
PG(AV)
0.1
W
Storage Temperature
TSTG
-40 ~ +150
°C
Junction Temperature
TJ
125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Case
θJC
15
K/W
Junction to Ambient
For minimum footprint
θJA
156
K/W
For pad area
70
K/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Gate Trigger Current
IGT
VD=12V, IT=0.1A
T2+G+
3
mA
T2+G-
3
mA
T2-G-
3
mA
T2-G+
5
mA
Gate Trigger Voltage
VGT
VD=12V, IT=0.1A
1.3
V
VD=VDRM, IT=0.1A, TJ=125°C
0.2
V
Holding Current
IH
VD=12V, IG=0.1A
7
mA
Latching Current
IL
VD=12V, IG=0.1A
T2+G+
7
mA
T2+G-
20
mA
T2-G-
7
mA
T2-G+
7
mA
On-State Voltage
VT
IT=1A
1.3
1.6
V
Off-State Current
ID
VD=VDRM(max), TJ=125°C
0.5
mA
Rate of Rise of Off-State Voltage
dVD/dt
VDM=0.67VDRM(max), TJ=110°C,
exponential waveform, gate open
circuit
10
V/µs
Rate of Change of
Commutating Voltage
dVcom/dt
VDM=400V, TJ=110°C, ITM=1A,
dIcom/dt= 0.44A/ms
0.5
V/µs



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