SI1330EDL datasheet(2/9 Pages) TFUNK

2 / 9 page

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Document Number: 72861

S10-0721-Rev. B, 29-Mar-10

Vishay Siliconix

Si1330EDL

Notes:

a. Pulse test: PW

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Limits

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 10 µA

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.0

2.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 10 V

± 1

µA

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

VDS = 60 V, VGS = 0 V, TJ = 55 °C

On-State Drain Currentb

ID(on)

VGS = 10 V, VDS = 7.5 V

0.5

VGS = 4.5 V, VDS = 10 V

0.4

VGS = 3 V, VDS = 10 V

0.05

Drain-Source On-Resistanceb

RDS(on)

VGS = 10 V, ID = 0.25 A

1.0

2.5

VGS = 4.5 V, ID = 0.2 A

1.4

VGS = 3 V, ID = 0.025 A

3.0

Forward Transconductanceb

gfs

VDS = 10 V, ID = 0.25 A

350

Diode Forward Voltage

VSD

IS = 0.23 A, VGS = 0 V

0.83

1.2

Dynamicb

Total Gate Charge

VDS = 10 V, VGS = 4.5 V

ID ≅ 0.25 A

0.4

0.6

Gate-Source Charge

Qgs

0.11

Gate-Drain Charge

Qgd

0.15

Gate Resistance

173

Turn-On Time

td(on)

VDD = 30 V, RL = 150 Ω

ID ≅ 0.2 A, VGEN = 10 V

Rg = 10 Ω

3.8

4.8

Turn-Off Time

td(off)

12.8

9.6

Output Characteristics

0.0

0.2

0.4

0.6

0.8

1.0

012345

VDS - Drain-to-Source Voltage (V)

VGS = 10 V, 7 V

3 V

5 V

4 V

6 V

Transfer Characteristics

012345

VGS - Gate-to-Source Voltage (V)

TJ = - 55 °C

125 °C

25 °C

1.0

0.8

0.6

0.2

0.4

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