SIHLL110 datasheet(2/9 Pages) TFUNK

2 / 9 page

IRLL110, SiHLL110

www.vishay.com

Vishay Siliconix

S15-1195-Rev. F, 25-May-15

Document Number: 91320

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient



(PCB Mount) a

RthJA

-60

°C/W

Maximum Junction-to-Case (Drain)

RthJC

-40

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

100

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = 1 mA

0.12

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

1.0

2.0

Gate-Source Leakage

IGSS

VGS = ± 10 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

μA

VDS = 80 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 5.0 V

ID = 0.90 Ab

0.54



VGS = 4.0 V

ID = 0.75 A

0.76

Forward Transconductance

gfs

VDS = 25 V, ID = 0.90 A

0.57

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

250

Output Capacitance

Coss

-80

Reverse Transfer Capacitance

Crss

-15

Total Gate Charge

VGS = 5.0 V

ID = 5.6 A, VDS = 80 V,

see fig. 6 and 13b

6.1

Gate-Source Charge

Qgs

2.6

Gate-Drain Charge

Qgd

3.3

Turn-On Delay Time

td(on)

VDD = 50 V, ID = 5.6 A,

Rg = 12 , RD = 8.4 

-9.3

Rise Time

-47

Turn-Off Delay Time

td(off)

-16

Fall Time

-18

Internal Drain Inductance

Between lead,



6 mm (0.25") from

package and center of

die contact

-4.0

Internal Source Inductance

-6.0

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol



showing the



integral reverse



p - n junction diode

1.5

Pulsed Diode Forward Current a

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 1.5 A, VGS = 0 Vb

2.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb

110

130

Body Diode Reverse Recovery Charge

Qrr

-0.50

0.65

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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