MMDF4207 datasheet(2/11 Pages) ONSEMI

2 / 11 page

MMDF4207

http://onsemi.com

MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)

Characteristics

Symbol

Maximum

Unit

Drain−to−Source Voltage

Drain−to−Gate Voltage (RGS = 1.0 MW)

Gate−to−Source Voltage − Continuous

VDSS

VDGR

VGS

±12

1 Inch Square @

10 seconds on

FR−4 or G−10 PCB

Thermal Resistance

− Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current − Continuous @ TA = 25°C

Drain Current − Continuous @ TA = 70°C

Drain Current − Pulsed Drain Current (1)

RTHJA

IDM

62.5

2.0

7.8

5.7

°C/W

Watts

mW/°C

1 Inch Square @

Steady State on

FR−4 or G−10 PCB

Thermal Resistance

− Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current − Continuous @ TA = 25°C

Drain Current − Continuous @ TA = 70°C

Drain Current − Pulsed Drain Current (1)

RTHJA

IDM

1.28

10.2

6.2

4.6

°C/W

Watts

mW/°C

Minimum Pad @

Steady State on

FR−4 or G−10 PCB

Thermal Resistance

− Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current − Continuous @ TA = 25°C

Drain Current − Continuous @ TA = 70°C

Drain Current − Pulsed Drain Current (1)

RTHJA

IDM

166

0.75

6.0

4.8

3.5

°C/W

Watts

mW/°C

Operating and Storage Temperature Range

TJ, Tstg

−55 to 150

°C

Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C

(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 5.0 Apk, L = 40 mH, RG = 25 W)

EAS

500

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

(1) Repetitive rating; pulse width limited by maximum junction temperature.

MMDF4207 Datasheet(PDF) 2 Page - ON Semiconductor

MMDF4207 Datasheet(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL