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ASM3P2811B Datasheet(PDF) 3 Page - ON Semiconductor

Part # ASM3P2811B
Description  Low Power EMI Reduction IC
PDF  9 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ASM3P2811B Datasheet(HTML) 3 Page - ON Semiconductor

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ASM3P2811A/B, ASM3P2812A/B, ASM3P2814A/B
http://onsemi.com
3
Table 3. OUTPUT FREQUENCY DEVIATION AND SPREAD SELECTION
Part Number
D_C (pin 3)
SRS (pin 4)
Frequency Deviation (%) (Note 1)
FS = 0
FS = 1
10/20/40 (MHz)
20/40/80 (MHz)
20/40/80 (MHz)
40/80/160 (MHz)
ASM3P28XXA
0
0
−3
−2.5
−2.7
−2.6
0
1
−3.7
−3.4
−3.8
−3.6
1
0
±1.5
±1.2
±1.5
±1.3
1
1
±1.8
±1.6
±1.9
±1.8
ASM3P28XXB
0
0
−1.7
−1.0
−1.5
−1.4
0
1
−2.0
−1.5
−2.0
−1.9
1
0
±0.75
±0.6
±0.8
±0.7
1
1
±1.0
±0.75
±1.0
±0.9
1. Frequency Deviation given in the table is for the Output Frequency Range covering ASM3P2811x / 12x / 14x.
Table 4. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Rating
Unit
VDD, VIN
Voltage on any pin with respect to Ground
−0.5 to +4.6
V
TSTG
Storage temperature
−65 to +125
°C
Ts
Max. Soldering Temperature (10 sec)
260
°C
TJ
Junction Temperature
150
°C
TDV
Static Discharge Voltage (As per JEDEC STD 22− A114−B)
2
KV
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 5. OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VDD
Voltage on any pin with respect to GND
3.0
3.6
V
TA
Operating temperature
−40
+85
°C
CL
Load Capacitance
10
pF
CIN
Input Capacitance
7
pF



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