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ACE6344B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE6344B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 11 page  ACE6344B N&P-Channel Enhancement Mode MOSFET VER 1.1 1 Description The ACE634B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level Features N-Channel VDS(V)=20V, ID=3A, RDS(ON) <65mΩ (VGS=4.5V) <90 mΩ (V GS=2.5V) P-Channel VDS(V)=-20V, ID=-2.5A , RDS(ON) <110mΩ (VGS=-4.5V) <140 mΩ (V GS=-2.5V) Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit N-Channel P-Channel Drain-Source Voltage VDSS 20 -20 V Gate-Source Voltage VGSS ±12 ±12 V Continuous Drain Current (TJ=150℃) *AC TA=25℃ ID 3 -2.5 A TA=70℃ 2.4 -2.2 Drain Current (pulse) * B IDM 13 -13 A Power Dissipation TA=25℃ PD 1.15 1.15 W TA=70℃ 0.73 0.73 Operating temperature / Storage temperature TJ/ TSTG -55 to 150 OC Packaging Type SOT-23-6L Marking 2003 . |
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