NCE2012 datasheet(1/7 Pages) NCEPOWER

Part #	NCE2012

Description	NCE N-Channel Enhancement Mode Power MOSFET

PDF	7 Pages

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Manufacturer	NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]

Direct Link	http://www.ncepower.com

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NCE2012

Pb Free Product

http://www.ncepower.com

Wuxi NCE Power Semiconductor Co., Ltd

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v1.0

1

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE2012 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

●

VDS =20V,ID =12A

RDS(ON) < 8mΩ @ VGS=10V

RDS(ON) < 11mΩ @ VGS=10V

●

High density cell design for ultra low Rdson

●

Fully characterized Avalanche voltage and current

Application

●

DC/DC Converter

●

Notebook Vcore

Schematic diagram

Marking and pin Assignment

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2012

NCE2012

SOP-8

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

12

A

Drain Current-Continuous(TA=100℃)

ID (100℃)

8

A

Pulsed Drain Current

IDM

40

A

Maximum Power Dissipation

PD

2.5

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

(Note 2)

RθJA

50

/W

℃

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NCE2012 Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd

NCE2012 Datasheet(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd

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