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MMDF2C02HDR2 Datasheet(PDF) 2 Page - ON Semiconductor

Part # MMDF2C02HDR2
Description  Power MOSFET
PDF  13 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMDF2C02HDR2 Datasheet(HTML) 2 Page - ON Semiconductor

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MMDF2C02HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 1)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
V(BR)DSS
−
20
−
−
Vdc
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
IDSS
(N)
(P)
−
−
−
−
1.0
1.0
μAdc
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0)
IGSS
−
−
−
100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
VGS(th)
−
1.0
1.5
2.0
Vdc
Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
(N)
(P)
−
−
0.074
0.152
0.100
0.180
Ohm
Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
RDS(on)
(N)
(P)
−
−
0.058
0.118
0.090
0.160
Ohm
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
(N)
(P)
2.0
2.0
3.88
3.0
−
−
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
(N)
(P)
−
−
455
420
630
588
pF
Output Capacitance
Coss
(N)
(P)
−
−
184
290
250
406
Transfer Capacitance
Crss
(N)
(P)
−
−
45
116
90
232
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(on)
(N)
(P)
−
−
11
19
22
38
ns
Rise Time
tr
(N)
(P)
−
−
58
66
116
132
Turn−Off Delay Time
td(off)
(N)
(P)
−
−
17
25
35
50
Fall Time
tf
(N)
(P)
−
−
20
37
40
74
Turn−On Delay Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
td(on)
(N)
(P)
−
−
7.0
11
21
22
Rise Time
tr
(N)
(P)
−
−
32
21
64
42
Turn−Off Delay Time
td(off)
(N)
(P)
−
−
27
45
54
90
Fall Time
tf
(N)
(P)
−
−
21
36
42
72
1. Negative signs for P−Channel device omitted for clarity.
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.



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