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MMDF2C02ER2 Datasheet(PDF) 1 Page - ON Semiconductor

Part # MMDF2C02ER2
Description  Power MOSFET
PDF  10 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMDF2C02ER2 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 8
1
Publication Order Number:
MMDF2C02E/D
MMDF2C02E
Power MOSFET
2.5 Amps, 25 Volts
Complementary SO−8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a low reverse recovery time. MiniMOS
t
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc−dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive − Can Be Driven by Logic ICs
Miniature SO−8 Surface Mount Package − Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
Avalanche Energy Specified
Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
25
Vdc
Gate−to−Source Voltage
VGS
± 20
Vdc
Drain Current − Continuous N−Channel
P−Channel
− Pulsed
N−Channel
P−Channel
ID
IDM
3.6
2.5
18
13
Adc
Operating and Storage Temperature Range
TJ and
Tstg
− 55
to 150
°C
Total Power Dissipation @ TA= 25°C (Note 2)
PD
2.0
Watts
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 20 V, VGS = 10 V, Peak IL = 9.0 A,
L = 6.0 mH, RG = 25 Ω)N−Channel
(VDD = 20 V, VGS = 10 V, Peak IL = 7.0 A,
L = 10 mH, RG = 25 Ω)P−Channel
EAS
245
245
mJ
Thermal Resistance − Junction to Ambient
(Note 2)
RθJA
62.5
°C/W
Maximum Lead Temperature for Soldering,
0.0625″ from case. Time in Solder Bath is
10 seconds.
TL
260
°C
1. Negative signs for P−Channel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
N−Source
1
2
3
4
8
7
6
5
Top View
N−Gate
P−Source
P−Gate
N−Drain
N−Drain
P−Drain
P−Drain
Device
Package
Shipping
ORDERING INFORMATION
MMDF2C02ER2
SO−8
2500 Tape & Reel
D
S
G
P−Channel
D
S
G
N−Channel
SO−8
CASE 751
STYLE 14
MARKING
DIAGRAM
PIN ASSIGNMENT
2.5 AMPERES, 25 VOLTS
RDS(on) = 100 mW (N−Channel)
RDS(on) = 250 mW (P−Channel)
http://onsemi.com
1
8
F2C02
ALYW
1
8
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.


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