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MMDF2C02ER2 Datasheet(PDF) 1 Page - ON Semiconductor |
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MMDF2C02ER2 Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 10 page ![]() © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 8 1 Publication Order Number: MMDF2C02E/D MMDF2C02E Power MOSFET 2.5 Amps, 25 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. MiniMOS t devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, with Soft Recovery • Avalanche Energy Specified • Mounting Information for SO−8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 25 Vdc Gate−to−Source Voltage VGS ± 20 Vdc Drain Current − Continuous N−Channel P−Channel − Pulsed N−Channel P−Channel ID IDM 3.6 2.5 18 13 Adc Operating and Storage Temperature Range TJ and Tstg − 55 to 150 °C Total Power Dissipation @ TA= 25°C (Note 2) PD 2.0 Watts Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 V, VGS = 10 V, Peak IL = 9.0 A, L = 6.0 mH, RG = 25 Ω)N−Channel (VDD = 20 V, VGS = 10 V, Peak IL = 7.0 A, L = 10 mH, RG = 25 Ω)P−Channel EAS 245 245 mJ Thermal Resistance − Junction to Ambient (Note 2) RθJA 62.5 °C/W Maximum Lead Temperature for Soldering, 0.0625″ from case. Time in Solder Bath is 10 seconds. TL 260 °C 1. Negative signs for P−Channel device omitted for clarity. 2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max. N−Source 1 2 3 4 8 7 6 5 Top View N−Gate P−Source P−Gate N−Drain N−Drain P−Drain P−Drain Device Package Shipping† ORDERING INFORMATION MMDF2C02ER2 SO−8 2500 Tape & Reel D S G P−Channel D S G N−Channel SO−8 CASE 751 STYLE 14 MARKING DIAGRAM PIN ASSIGNMENT 2.5 AMPERES, 25 VOLTS RDS(on) = 100 mW (N−Channel) RDS(on) = 250 mW (P−Channel) http://onsemi.com 1 8 F2C02 ALYW 1 8 A = Assembly Location L = Wafer Lot Y = Year W = Work Week †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. |
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