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MTSF3N02HD Datasheet(PDF) 1 Page - ON Semiconductor |
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MTSF3N02HD Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 12 page ![]() © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 6 1 Publication Order Number: MTSF3N02HD/D MTSF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N−Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Miniature Micro8 Surface Mount Package − Saves Board Space • Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Avalanche Energy Specified • Mounting Information for Micro8 Package Provided D S G 3 AMPERES 20 VOLTS RDS(on) = 40 mW 1 8 Device Package Shipping ORDERING INFORMATION MTSF3N02HDR2 Micro8 4000 Tape & Reel Micro8 CASE 846A STYLE 1 http://onsemi.com AC MARKING DIAGRAM WW WW = Date Code Source 1 2 3 4 8 7 6 5 Top View Source Source Gate Drain Drain Drain Drain PIN ASSIGNMENT Preferred devices are recommended choices for future use and best overall value. N−Channel |
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