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SLD-68-026 Datasheet(PDF) 1 Page - API Delevan

Part # SLD-68-026
Description  Planar Photodiode with BG-18 Filter
PDF  1 Pages
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Manufacturer  API [API Delevan]
Direct Link  http://www.delevan.com
Logo API - API Delevan

SLD-68-026 Datasheet(HTML) 1 Page - API Delevan

  SLD-68-026 Datasheet HTML 1Page - API Delevan  
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Advanced Photonix Canada Inc.,
300 St-Sacrement
Suite 519
Montréal, QC, Canada H2Y 1X4
Page 1
Phone:(514) 768-8000
Fax: (514) 768-8889
http://www.advancedphotonix.com
SLD-68-026
Planar Photodiode with BG-18 Filter
Features
Planar photodiode with BG-18 filter
Low capacitance
Fast switching time
Low leakage current
Linear response vs irradiance
TO-46 base with epoxy dome lens
Description
The SLD-68-026 Silicon planar photodiode with added
BG-18 filter is designed for visible light detection, TO-46
package with epoxy dome lens allow wide angle of
detection. The photodiode is suitable for photopic
sensing applications such as: color sensing, analytics,
safety equipment and special sensors for automation.
Low dark current and low capacitance make it the
ideal detector for visible light detection applications.
Absolute Maximum Ratings
Storage Temperature
-20
C to +75C
Operating Temperature
-20
C to +75C
Soldering Temperature (3)
260
C
Notes: (1) Ee = light source @ 2854
K
(2) Ee = light source @
 = 560 nm
(3) >2 mm from case for <5 sec.
Anode +
Cathode -
(common to case)
25 min.
Dimensions in mm. T olerance: +/-0.13
ø 5.33
Note: T ab removed
4.2
0.4 - 0.5
2.8 max.
2.54
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
100°
90°
80°
70°
60°
50°
1.0
40°
30°
20°
10°
Half Angle = 40°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100° 120°
0.0
0.2
0.4
0.6
0.8
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25C unless otherwise noted)
Symbol
Parameter
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ISC
Short Circuit Current
7.5
11.0
A
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.35
V
Ee=25mw/cm
2
(1)
ID
Reverse Dark Current:
100
nA
VR= 5V, Ee=0
CJ
Junction Capacitance
40
pF
VR=0, Ee=0, f=1MHz
tR
Rise Time
1.0
s
VR=10V, RL=1k (2)
tF
Fall Time
1.5
s
VR=10V, RL=1k (2)
TCI
Temp. Coef., ISC
+0.2
%/
C (1)
VBR
Reverse Breakdown Voltage
50
V
IR=100A
P
Maximum Sensitivity Wavelength
550
nm
R
Sensitivity Spectral Range
400
700
nm
1/2
Acceptance Half Angle
40
deg
(off center-line)
Specifications subject to change without notice.
REV 04/04-14
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
200
300
400
500
600
700
800
900
1000
1100
Wavelength (nm)
Normalized Spectral Response


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