D5V0P1B2LP3

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Current

4

A

8/20µs, per Figure 3

ESD Protection – Contact Discharge

±15

kV

IEC 61000-4-2 Standard

ESD Protection – Air Discharge

±17

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

—

—

5.5

V

—

Channel Leakage Current (Note 6)

—

10

100

nA

Clamping Voltage, Positive Transients

—

7.0

9.0

V

μS, Figure 3

—

11.0

13.0

μS, Figure 3

Breakdown Voltage

6

7

8

V

Channel Input Capacitance

—

8

10

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0

t, TIME (µs)

Figure 1 Pulse Waveform

20

40

60

100

50

0

Half Value I

/2

pp

8x20 Waveform

as defined by R.E.A.

5

6

7

8

9

0

1

2

3

4

5

6

V , REVERSE VOLTAGE (V)

Figure 2 Typical Total Capacitance vs. Reverse Voltage

R

f = 1MHz

D5V0P1B2LP3

Document number: DS37186 Rev. 1 - 2

2 of 5

www.diodes.com

August 2014

© Diodes Incorporated