BFP620F

Apr-21-2004

1

NPN Silicon Germanium RF Transistor*

• High gain low noise RF transistor

• Small package 1.4 x 0.8 x 0.59 mm

• Outstanding noise figure F = 0.7 dB at 1.8 GHz

Outstanding noise figure F = 1.3 dB at 6 GHz

• Maximum stable gain

• Gold metallization for extra high reliability

*Short-term description

TSFP-4

1

2

4

3

1

34

2

Direction of Unreeling

Top View

XYs

ESD

: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP620F

R2s

1=B

2=E

3=C

4=E

-

-

TSFP-4

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

2.3

2.1

V

Collector-emitter voltage

7.5

Collector-base voltage

7.5

Emitter-base voltage

1.2

Collector current

80

mA

Base current

3

185

mW

Junction temperature

150

°C

Ambient temperature

-65 ... 150

Storage temperature

-65 ... 150

1TS is measured on the collector lead at the soldering point to the pcb