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STP45N60DM2AG Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP45N60DM2AG
Description  Extremely high dv/dt ruggedness
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP45N60DM2AG Datasheet(HTML) 1 Page - STMicroelectronics

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July 2015
DocID028065 Rev 1
1/13
This is information on a product in full production.
www.st.com
STP45N60DM2AG
Automotive-grade N-
channel 600 V, 0.085 Ω typ., 34 A
MDmesh™ DM2 Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS @
TJmax.
RDS(on)
max.
ID
PTOT
STP45N60DM2AG
650 V
0.093 Ω
34 A
250 W
•
Designed for automotive applications and
AEC-Q101 qualified
•
Fast-recovery body diode
•
Extremely low gate charge and input
capacitance
•
Low on-resistance
•
100% avalanche tested
•
Extremely high dv/dt ruggedness
•
Zener-protected
Applications
•
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STP45N60DM2AG
45N60DM2
TO-220
Tube


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