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CLY35 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # CLY35
Description  HiRel C-Band GaAs Power-MESFET
PDF  9 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

CLY35 Datasheet(HTML) 3 Page - Infineon Technologies AG

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CLY35
Semiconductor Group
3 of 9
Draft D, September 99
Electrical Characteristics (at TA=25°C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Drain-source saturation current
VDS = 2 V, VGS = 0 V
IDss
1.2
2.0
2.8
A
Gate threshold voltage
VDS = 3 V, ID = 80 mA
-VGth
1.6
2.6
3.6
V
Drain current at pinch-off, low VDS
VDS = 3 V, VGS = -3.8 V
IDp3
-
-
200
µA
Gate current at pinch-off, low VDS
VDS = 3 V, VGS = -3.8 V
-IGp3
--
80
µA
Drain current at pinch-off, high VDS
VDS = 12 V, VGS = -4 V
IDp12
-
-
4000
µA
Gate current at pinch-off, high VDS
VDS = 12 V, VGS = -4 V
-IGp12
-
-
1600
µA
Transconductance
VDS = 3 V, ID = 720 mA
gm
600
730
-
mS
Thermal resistance
junction to soldering point
VDS = 9 V, ID = 720 mA, Ts = +25°C
Rth JS
-
6.8
-
K/W



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