Electrical characteristics

STD10P10F6

4/15

DocID026365 Rev 2

2

Electrical characteristics

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Drain-source breakdown

Voltage

100

V

Zero gate voltage drain

current

1

µA

125 °C

10

µA

Gate body leakage current

±100

nA

Gate threshold voltage

2

4

V

Static drain-source on-

resistance

0.136

0.18

Ω

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Input capacitance

-

864

-

pF

Output capacitance

-

45

-

pF

Reverse transfer capacitance

-

25

-

pF

Total gate charge

-

16.5

-

nC

Gate-source charge

-

3.5

-

nC

Gate-drain charge

-

3.8

-

nC

Table 6: Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

-

10.5

-

ns

Rise time

-

4.8

-

ns

Turn-off delay time

-

24

-

ns

Fall time

-

4.5

-

ns

For the P-channel Power MOSFET the actual polarity of the voltages and the

current must be reversed.