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STL130N8F7 Datasheet(PDF) 4 Page - STMicroelectronics |
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STL130N8F7 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 15 page ![]() Electrical characteristics STL130N8F7 4/15 DocID023889 Rev 3 2 Electrical characteristics (TJ = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min Typ Max Unit V(BR)DSS Drain-source breakdown voltage VGS= 0, ID = 250 µA 80 V IDSS Zero gate voltage drain current VGS = 0, VDS = 80 V 1 µA VGS = 0, VDS = 80 V, TJ = 125 °C 10 µA IGSS Gate body leakage current VDS = 0, VGS = 20 V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2.5 4.5 V RDS(on) Static drain-source on-resistance VGS= 10 V, ID= 13 A 3 3.6 m Ω Table 5. Dynamic Symbol Parameter Test conditions Min Typ Max Unit Ciss Input capacitance VGS=0, VDS = 40 V, f=1 MHz - 6340 - pF Coss Output capacitance - 1195 - pF Crss Reverse transfer capacitance -105 - pF Qg Total gate charge VDD=40 V, ID = 26 A VGS =10 V -96 - nC Qgs Gate-source charge - 29 - nC Qgd Gate-drain charge - 26 - nC Table 6. Switching times Symbol Parameter Test conditions Min Typ Max Unit td(on) Turn-on delay time VDD=40 V, ID= 13 A, RG=4.7 Ω, VGS=10 V -26 - ns tr Rise time - 51 - ns td(off) Turn-off delay time - 82 - ns tf Fall time - 44 - ns |
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