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ACE4908A Datasheet(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE4908A Datasheet(HTML) 2 Page - ACE Technology Co., LTD. |
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2 / 7 page ![]() ACE4908A Dual P-Channel Enhancement Mode MOSFET VER 1.1 2 Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current(TJ=150℃) TA=25 OC ID -1.0 A TA=70 OC -0.7 Pulse Drain Current IDM -3 A Continuous Source Current(Diode Conduction) IS -0.6 Power Dissipation TA=25 OC PD 0.35 W TA=70 OC 0.19 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Thermal Resistance-Junction to Ambient T ≤ 10sec RθJA 360 OC/W Steady State 400 Packaging Type SOT-363(SC-70-6) P- channel P- channel Ordering information ACE4908A EM + H Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 D2 Drain 2 4 S2 Source 2 5 G2 Gate 2 6 D1 Drain1 Pb - free Halogen - free EM : SOT363 |
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