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UT699E Datasheet(PDF) 17 Page - Aeroflex Circuit Technology |
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UT699E Datasheet(HTML) 17 Page - Aeroflex Circuit Technology |
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17 / 41 page ![]() 17 Aeroflex Microelectronics Solutions - HiRel 36-00-00-001 Ver. 1.5.0 3.2 Recommended Operating Conditions (VDD = 3.3V + 0.3V; VDDC = 1.2V + 0.1V; TC = -55oC to 105oC) 3.3 Operational Environmet The UT699E processor includes the following SEU mitigation features: * Cache memory error-detection of up to 4 errors per tag or 32-bit word * Autonomous and software transparent error handling * No timing impact due to error detection or correction Notes: 1. TID irradation per MIL-STD-883, Test Method 1019, condition A. Post irradiation electrical testing performed at room temperature. 2. Worst case temperature and voltage of TC = +105oC, VDD = 3.6V, VDDC = 1.3V. 3. Contact factory for error rate information. 4. The error rate calculation was performed using SpaceRad 6.0 for a Geosynchronous orbit in the Adams 90% worst-case environment with 100mil Al shielding. Symbol Description Min Max Units VDDC Core supply voltage 1.1 1.3 V VDD I/O supply voltage 3.0 3.6 V VIN Input voltage any pin 0 VDD V TC Case operating temperature -55 105 oC tR Rise time, all CMOS and PCI inputs (0.1VDD to 0.9VDD) -- 20 ns tF Fall time, all CMOS and PCI inputs (0.9VDD to 0.1VDD) -- 20 ns PARAMETER LIMIT UNITS Total Ionizing Dose (TID) 1 1E5 rad (Si) Single Event Latchup Immune (SEL) 2 <110 MeV-cm2/mg Single Event Upset (SEU) 3, 4 Inherent register upset rate 5.2E-7 errors/device-day Single Event Upset (SEU) 3, 4 Multiple-bit error (MBE) rate which over- comes internal error detection & correction architecture 2.8E-11 MBE/device-day |
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