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AP65SL190AI Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP65SL190AI Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
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1 / 6 page  AP65SL190AI Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% R g & UIS Test VDS @ Tj,max. 700V ▼ Fast Switching Characteristic RDS(ON) 0.19Ω ▼ Simple Drive Requirement ID 3,4 20A ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings@Tj=25 oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Drain Current, VGS @ 10V 3,4 A ID@TC=100℃ Drain Current, VGS @ 10V 3,4 A IDM Pulsed Drain Current 1 A dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …400V ) V/ns PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy 5 mJ dv/dt Peak Diode Recovery dv/dt 6 V/ns TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.6 ℃ /W Rthj-a 65 ℃ /W Data & specifications subject to change without notice 1 201505211 Parameter 300 50 1.92 -55 to 150 -55 to 150 Maximum Thermal Resistance, Junction-ambient 15 34.7 650 +20 20 12.3 48 Rating Halogen-Free Product G D S AP65SL190A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercial- industrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. G D S TO-220CFM(I) . |
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