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AP65SL190AP Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP65SL190AP Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
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1 / 6 page  AP65SL190AP Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% R g & UIS Test VDS @ Tj,max. 700V ▼ Fast Switching Characteristic RDS(ON) 0.19Ω ▼ Simple Drive Requirement ID 3 20A ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings@Tj=25 oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Drain Current, VGS @ 10V 3 A ID@TC=100℃ Drain Current, VGS @ 10V 3 A IDM Pulsed Drain Current 1 A dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …400V ) V/ns PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy 4 mJ dv/dt Peak Diode Recovery dv/dt 5 V/ns TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.85 ℃/W Rthj-a 62 ℃/W Data & specifications subject to change without notice 300 15 -55 to 150 -55 to 150 48 50 147 +20 20 12.3 Parameter Rating 650 1 201506161 Maximum Thermal Resistance, Junction-ambient Halogen-Free Product 2 G D S AP65SL190A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial-industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G D S TO-220(P) . |
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