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ACPDVR105V0USP-HF Datasheet(PDF) 1 Page - Comchip Technology |
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ACPDVR105V0USP-HF Datasheet(HTML) 1 Page - Comchip Technology |
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1 / 4 page ![]() ACPDVR105V0USP-HF Page 1 AQW-JP004 REV:A Comchip Technology CO., LTD. SLP2510P8 Dimensions in inches and (millimeter) 0.102(2.60) 0.094(2.40) 0.043(1.10) 0.035(0.90) 0.010(0.25) 0.026(0.65) 0.020(0.50) 0.02(0.50)BSC Symbol Typ Parameter Min Max Unit Junction capacitance Conditions Breakdown voltage V(BR) V IT = 1mA,I/O Pin to GND Reverse Leakage current IR uA 0.4 CJ pF VR =0V, f =1MHz between I/Os 6.0 1.0 VRWM = 5V, I/O Pin to GND Clamping voltage ESD capability kV ±15 Peak pulse power PPP W 150 Storage temperature range Junction temperature range 150 °C TSTG TJ °C 150 -55 VC V IPP = 1A,I/O Pin to GND(8/20µs) 15 VESD IEC 61000-4-2(Air) IEC 61000-4-2(Contact) ±8 VESD kV RoHS Device Mechanical data - Case: SLP2510P8 small outline plastic package - Terminals: Matte tin plated, solderable per MIL-STD-202,method 208 - Mounting Compound Flammability Rating: UL 94V-0 - Weight: 0.015 grams(approx.). - High temperature soldering guaranteed: 260°C/10 second 0.006(0.15) -55 0.002(0.05) 0.000(0.00) Reverse working voltage 5.0 VRWM V I/O Pins to GND (Note 1) Junction capacitance 0.8 CJ pF VR =0V, f =1MHz between I/Os GND Halogen Free Low Capacitance ESD Protection Array 0.018(0.45) 0.014(0.35) Company reserves the right to improve product design , functions and reliability without notice. 1 2 3 4 5 10 9 8 7 6 Circuit Diagram Tp=8/20µs waveform Note: 1. ESD devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. Features - Protects four high speed I/O lines - Working Voltage: 5V - Low clamping voltage - IEC61000-4-2 Level 4 ESD protection - IEC61000-4-4 FET 40A ( 5/50ns ) - Low leakage current - Comply with AEC-Q101 Maximum Ratings and Electrical Characteristics (at TA=25°C unless otherwise noted) |
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