| Electronic Components Datasheet Search |
|
DMNH6008SPS Datasheet(PDF) 4 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
DMNH6008SPS Datasheet(HTML) 4 Page - Diodes Incorporated |
|
4 / 7 page ![]() POWERDI is a registered trademark of Diodes Incorporated. DMNH6008SPS Document number: DS38136 Rev. 1 - 2 4 of 7 www.diodes.com March 2016 © Diodes Incorporated DMNH6008SPS 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature V GS = 10V, ID = 20A 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current T A = 150 oC T A = 85 oC T A = 25 oC T A = -55 oC V GS = 0V T A = 175 oC T A = 125 oC 10 100 1000 10000 0 5 10 15 20 25 30 35 40 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Typical Junction Capacitance f=1MHz C rss C oss C iss 0 2 4 6 8 10 0 10 20 30 40 Q g (nC) Figure 12. Gate Charge V DS = 30V, ID = 20A 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Temperature I D = 250μA I D = 1mA 0.1 1 10 100 1000 10000 100000 1000000 0 5 10 15 20 25 30 35 40 45 50 55 60 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakage Current vs. Voltage 25 ℃ 85 ℃ 150 ℃ 125 ℃ 175 ℃ |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |