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PI5PD2560 Datasheet(PDF) 3 Page - Pericom Semiconductor Corporation |
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PI5PD2560 Datasheet(HTML) 3 Page - Pericom Semiconductor Corporation |
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3 / 12 page ![]() ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||| 2016-03-0004 PT0489-5 04/29/16 3 PI5PD2560/2561 Dual Channel, Adjustable Current-Limited Power Switch DC Electrical Characteristics VI(IN)= 5.0V; TA=-40°C to +85°C; unless otherwise specified. Sym Description Test Conditions (1) Min Typ Max Unit Power Switch RDS(on) Static drain-source on-state resistance - - 44 70 mΩ tr Rise time, output VI(IN) = 5.0V CL = 1F, RL = 100Ω 1 2 4 ms VI(IN) = 2.5V 0.5 1 3 tf Fall time, output VI(IN) = 5.0V 0.3 0.5 1.0 VI(IN) = 2.5V 0.2 0.4 0.6 tIOS Response time to short circuit VIN = 5.0 V - - 3.5 - µs Enable ENx VIH High-level input voltage 2.5 V ≤ VI(IN) ≤ 5.5 V 1.1 - - V VIL Low-level input voltage 2.5 V ≤ VI(IN) ≤ 5.5 V - - 0.6 ton Turn on time CL = 1F, RL = 100Ω - - 5 ms toff Turn off time - - 2 Current Limit IOS Current-limit threshold @ VOUTx = VIN * 0.8 RILIM=20kΩ 2590 2800 3005 mA RILIM=61.9kΩ 800 900 1005 RILIM=100kΩ 400 560 645 IOC_TRIP Overcurrent trip threshold VIN = 5 V, current ramp (≤ 100 A/s) on OUT ,RILIM=20.0kΩ 2700 3160 3600 VIN = 5 V, current ramp (≤ 100 A/s) on OUT ,RILIM=100kΩ 450 650 800 tIOS Response time to short circuit VIN = 5.0V - 3.5 - s Supply Current ISTB Input supply current at output disable No load on OUT, VEN=disable TA =25°C - 0.1 2 A ISS Input supply current at output enable No load on OUT, VEN=5.0V , TA=25°C RILIM=20kΩ - 100 125 RILIM=100kΩ - 85 110 IREV Reverse Leakage Current VOUTx=5.5V, VIN=0V, TA=25°C - 0.01 1.0 Under Voltage Lockout UVLO Low-level input voltage VIN Rising - 2.35 2.45 V Hysteresis for low-level input voltage TA=25°C - 35 - mV /FAULTx FLAG VOL Output low voltage I/FAULTx =1mA - - 180 mV IOFF Off-state leakage V/FAULTx =5.5V - - 1 A TD /FAULTx deglitch FAULTx assertion or de-assertion due to over-current condition 4 9 15 ms Thermal Shutdown OTSD2 Thermal shutdown threshold - - 155 - °C OTSD Thermal shutdown threshold in current- limit - - 135 - Hysteresis - - 20 - Note: Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. |
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