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HCI70R700T Datasheet(PDF) 1 Page - SemiHow Co.,Ltd. |
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HCI70R700T Datasheet(HTML) 1 Page - SemiHow Co.,Ltd. |
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1 / 7 page ![]() Very Low FOM (R DS(on) XQg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested I2-PAK Parameter Value Unit BVDSS @Tj,max 750 V ID 6A RDS(on), max 0.7 Qg,Typ 14 nC Key Parameters Package & Internal Circuit HCI70R700T 700V N-Channel Super Junction MOSFET Features Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) TV power & LED Lighting Power Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units R JC Junction-to-Case -- 2.5 /W R JA Junction-to-Ambient -- 62.5 Symbol Parameter Value Units V DSS Drain-Source Voltage 700 V V GS Gate-Source Voltage 30 V I D Drain Current – Continuous (T C = 25 ) 6.0 A Drain Current – Continuous (T C = 100 ) 3.8 A I DM Drain Current – Pulsed (Note 1) 18 A E AS Single Pulsed Avalanche Energy (Note 2) 155 mJ P D Power Dissipation (T C = 25 ) 50 W T J, TSTG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 Absolute Maximum Ratings T C=25 unless otherwise specified Dec 2015 D G S |
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