2SB955 datasheet(1/2 Pages) ISC

Part #	2SB955

Description	High DC Current Gain- : hFE = 1000(Min)@ IC= -5A

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：

www.iscsemi.cn

isc & iscsemi is registered trademark

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isc Silicon PNP Darlington Power Transistor

2SB955

DESCRIPTION

·High DC Current Gain-

: hFE = 1000(Min)@ IC= -5A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO = -120V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = -1.5V(Max)@ IC= -5A

·Complement to Type 2SD1126

APPLICATIONS

·Designed for power switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-15

A

PC

Collector Power Dissipation

TC=25℃

50

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	TIP105	262Kb / 6P	PNP (HIGH DC CURRENT GAIN MIN
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	2SB882	102Kb / 2P	High DC Current Gain- : hFE = 2000(Min)@ IC= -5A
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2SB955 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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