2SA1964 datasheet(2/2 Pages) ISC

Part #	2SA1964

Description	Complement to Type 2SC5248

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

isc Silicon PNP Power Transistor

2SA1964

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -1mA; IB= 0

-160

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -50μ A; IE= 0

-160

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -50μ A; IC= 0

-5

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -1A; IB= -0.1A

-1.0

ICBO

Collector Cutoff Current

VCB= -160V; IE= 0

-1.0

μ A

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

-1.0

μ A

hFE

DC Current Gain

IC= -0.1A; VCE= -5V

200

Current-Gain

—Bandwidth Product

IC= -0.2A; VCE= -10V

150

MHz

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1MHz

 h

FE Classifications

60-120

100-200

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