B772 datasheet(1/2 Pages) DGNJDZ

Part #	B772

Description	Low speed switching

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Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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SOT-89

-3L Plastic-Encapsulate Transistors

B772 TRANSISTOR（PNP）

MARKING:B772

FEATURE

Low speed switching

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-

6

V

IC

Collector Current -Continuous

-3

A

PC

Collector Power Dissipation

0.5

W

RӨJA

Thermal Resistance,

Junction to Ambient

25

0

/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55

~150

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

M

in

T

yp

M

ax

U

nit

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA ,IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -10mA , IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -100μA,IC=0

-

6

V

Collector cut-off current

ICBO

VCB= -40V, IE=0

-1

μA

Collector cut-off current

ICEO

VCE=-30V, IB=0

-10

μA

Emitter cut-off current

IEBO

VEB=-6V, IC=0

-1

μA

DC current gain

hFE

VCE= -2V, IC= -1A

60

400

Collector-emitter saturation voltage

VCE(sat)

IC=-2A, IB= -0.2A

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=-2A, IB= -0.2A

-1.5

V

Transition frequency

fT

VCE= -5V, IC=-0.1A

f =10MHz

50

MHz

CLASSIFICATION OF hFE

Rank

R

O

Y

GR

Range

60-120

100-200

160-320

200-400

1 2 3

SOT-89

-3L

1. BASE

2

. COLLETOR

3

. EMITTER

℃

C,Dec,2013

DONGGUAN NANJING ELECTRONICS LTD.,

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