BC635 datasheet(1/3 Pages) DGNJDZ

Part #	BC635

Description	NPN Silicon Epitaxial Planar Transistor

PDF	3 Pages

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Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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BC635 / BC637 / BC639

NPN Silicon Epitaxial Planar Transistor

Medium Power Transistors

for driver stages of audio / video amplifiers

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Collector Base Voltage

BC635

BC637

BC639

VCBO

45

60

100

V

Collector Emitter Voltage

BC635

BC637

BC639

VCEO

45

60

80

V

Emitter Base Voltage

VEBO

5

V

Collector Current

IC

1

A

Peak Collector Current

ICM

1.5

A

Base Current

IB

100

mA

Peak Base Current

IBM

200

mA

Power Dissipation

Ptot

830

mW

Junction Temperature

Tj

150

O

C

Storage Temperature Range

TS

- 55 to + 150

O

C

1.Emitter 2.Collector 3.Base

TO-92 Plastic Package

Weight approx. 0.19g

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BC635 Datasheet(PDF) 1 Page - Nanjing International Group Co

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