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2SC4293 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4293 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor 2SC4293 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1500V; RBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 40 130 mA hFE-1 DC current gain IC= 1A; VCE= 5V 8 hFE-2 DC current gain IC= 4A; VCE= 5V 4 6 VECF C-E Diode Forward Voltage IF= 5A 2.0 V Switching times tstg Storage Time IC= 4A, IB1= 0.8A; IB2= -1.6A; VCC= 200V 3.0 μs tf Fall Time 0.3 μs |
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