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CT817D Datasheet(PDF) 3 Page - CT Micro International Corporation |
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CT817D Datasheet(HTML) 3 Page - CT Micro International Corporation |
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3 / 16 page ![]() CT Micro Rev 3 Proprietary & Confidential Page 3 May, 2016 CT817 Series DC Input 4-Pin Phototransistor Optocoupler Electrical Characteristics T A = 25°C (unless otherwise specified) Emitter Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VF Forward voltage IF=10mA - 1.24 1.4 V IR Reverse Current VR = 6V - - 5 µ A CIN Input Capacitance f= 1MHz - 10 30 pF Detector Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes BVCEO Collector-Emitter Breakdown IC= 100µA 35 - - V BVECO Emitter-Collector Breakdown IE= 100µA 6 - - V ICEO Collector-Emitter Dark Current VCE= 20V, IF=0mA - - 100 nA Transfer Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes CTR Current Transfer Ratio CT817 IF= 5mA, VCE= 5V 50 - 600 % CT817A 80 - 160 CT817B 130 - 260 CT817C 200 - 400 CT817D 300 - 600 VCE(SAT) Collector-Emitter Saturation Voltage IF= 20mA, IC= 1mA - 0.1 0.2 V RIO Isolation Resistance VIO= 500VDC 5x1010 - - CIO Isolation Capacitance f= 1MHz - 0.25 1 pF Switching Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes tr Rise Time IC= 2mA, VCE= 2V RL= 100 - 6 18 µ s tf Fall Time - 8 18 |
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