ACE4922BEM

Dual N-Channel Enhancement Mode Field Effect Transistor

VER 1.1

1

D

1

G

2

S

2

S

1

G

1

D

2

Description

The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are

produced using high cell density, DMOS trench technology. This high density process is especially

tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook computer

power management and other battery powered circuits where high-side switching, low in-line power

loss, and resistance to transients are needed.

APPLICATIONS



Low On-Resistance



Fast Switching Speed



Low-voltage drive



Easily designed drive circuits



Pb-Free Package is available. The suffix G means Pb-free package



ESD Protected：2000V

Packaging Type

Ordering information

SOT-363

6

5

4

ACE4922BEM+ H

1

2

3

Pb - free

Halogen - free

EM : SOT-363