DMNH6008SPSQ datasheet(2/7 Pages) DIODES

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POWERDI is a registered trademark of Diodes Incorporated.

DMNH6008SPSQ

Document number: DS38772 Rev. 1 - 2

2 of 7

www.diodes.com

April 2016

DMNH6008SPSQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

20

Continuous Drain Current (Note 7) VGS = 10V

Steady

State

TA = +25°C

TA = +100°C

16.5

11.7

Steady

State

TC = +25°C

TC = +100°C

Pulsed Drain Current (380

μs Pulse, Duty Cycle = 1%)

IDM

140

Maximum Continuous Body Diode Forward Current (Note 7)

Avalanche Current (Note 8) L=0.1mH

IAS

Avalanche Energy (Note 8) L=0.1mH

EAS

194

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

1.6

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

°C/W

Total Power Dissipation (Note 7)

3.3

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

RJA

°C/W

Thermal Resistance, Junction to Case (Note 7)

RJC

1.6

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

—

VDS = 48V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = 16V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(TH)

—

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

6.0

8.0



VGS = 10V, ID = 20A

Diode Forward Voltage

VSD

—

1.2

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Ciss

—

2597

—

VDS = 30V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss

—

437

—

Reverse Transfer Capacitance

Crss

—

118

—

Gate Resistance

—

2.0

—



VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 10V)

—

40.1

—



VDD = 30V, ID = 20A

Total Gate Charge (VGS = 4.5V)

—

21.2

—

Gate-Source Charge

Qgs

—

8.3

—

Gate-Drain Charge

Qgd

—

11.8

—

Turn-On Delay Time

tD(ON)

—

5.7

—

VDD = 30V, VGS = 10V,

Rg = 1, ID = 20A

Turn-On Rise Time

—

5.0

—

Turn-Off Delay Time

tD(OFF)

—

15.6

—

Turn-Off Fall Time

—

3.3

—

Reverse Recovery Time

tRR

—

IF = 20A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

Notes:

6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

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