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IRF252 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF252 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRF252 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA 200 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2 4 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=16A 0.12 Ω IGSS Gate Source Leakage Current VGS=±20V;VDS=0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=200V; VGS=0 250 uA VSD Diode Forward Voltage IS=25A; VGS=0 1.8 V Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 2000 3000 pF Crss Reverse Transfer Capacitance 300 500 Coss Output Capacitance 800 1200 tr Rise Time ID=16A; VDD=95V; RL=4.7Ω 100 ns td(on) Turn-on Delay Time 35 tf Fall Time 100 td(off) Turn-off Delay Time 125 PDF pdfFactory Pro www.fineprint.cn |
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