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BUT21B Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BUT21B
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUT21B Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUT21B Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUT21B Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
BUT21B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BUT21B
IC= 0.1A ;IB= 0; L= 25mH
400
V
BUT21C
450
VCE(sat)
Collector-Emitter
Saturation Voltage
BUT21B
IC= 3A; IB= 0.4A
1.5
V
BUT21C
IC= 3A; IB= 0.5A
1.5
VBE(sat)
Base-Emitter
Saturation Voltage
BUT21B
IC= 3A; IB= 0.4A
1.5
V
BUT21C
IC= 3A; IB= 0.5A
1.5
ICES
Collector Cutoff Current
VCE= VCESmax;VBE= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 9V; IC=0
10
mA
hFE
DC Current Gain
IC= 0.5A ; VCE= 10V
25
Switching Times; Resistive Load
ton
Turn-On Time
VCC= 250V, tp= 20μs, T= 2ms
For BUT21B
IC= 3A; IB1= -IB2= 0.4A
For BUT21C
IC= 3A; IB1= -IB2= 0.5A
1.0
μs
tstg
Storage Time
4.5
μs
tf
Fall Time
0.7
μs



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