CSD13302W datasheet(5/12 Pages) TI1

5 / 12 page

TC - Case Temperature (GC)

-75

-50

-25

100

125

150

175

0.5

0.6

0.7

0.8

0.9

1.1

1.2

1.3

1.4

D006

VGS - Gate-To-Source Voltage (V)

D007

TC = 25°C, I D = 1 A

TC = 125°C, I D = 1 A

VDS - Drain-to-Source Voltage (V)

100

1000

10000

D005

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

Qg - Gate Charge (nC)

0.5

1.5

2.5

3.5

4.5

D004

VGS - Gate-To-Source Voltage (V)

0.6

1.4

1.8

2.2

2.6

D003

TC = 125°C

TC = 25°C

TC = -55°C

VDS - Drain-to-Source Voltage (V)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

D002

VGS = 2.5 V

VGS = 3.5 V

VGS = 4.5 V

CSD13302W

www.ti.com

SLPS535 – MARCH 2015

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

VDS = 5 V

Figure 2. Saturation Characteristics

Figure 3. Transfer Characteristics

ID = 1 A

VDS = 6 V

Figure 4. Gate Charge

Figure 5. Capacitance

ID = 250 µA

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 6. Threshold Voltage vs Temperature

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