IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN170N65X2

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

170

A

I

SM

Repetitive, Pulse Width Limited by T

JM

680

A

V

SD

I

1.4

V

t

rr

270

ns

Q

RM

3.1



μC

I

RM

22.6

A

I

V

SOT-227B (IXFN) Outline

(M4 screws (4x) supplied)

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

55

90

S

R

Gi

Gate Input Resistance

0.56



C

iss

27.0

nF

C

oss

V

15.8

nF

C

rss

12.4

pF

C

o(er)

780

pF

C

o(tr)

3400

pF

t

d(on)

60

ns

t

r

15

ns

t

d(off)

133

ns

t

f

6

ns

Q

g(on)

434

nC

Q

gs

V

166

nC

Q

gd

137

nC

R

thJC

0.107

C/W

R

thCS

0.05

C/W

Resistive Switching Times

V

R

Effective Output Capacitance

Energy related

Time related

V

V