BGS3 datasheet(1/9 Pages) BEREX

Part #	BGS3

Description	30-4000 MHz SILICON GERMANIUM Gain Block

PDF	9 Pages

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Manufacturer	BEREX [BeRex Corporation]

Direct Link	http://www.berex.com

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1

Rev. E

BeRex

●website: www.berex.com

●email: sales@berex.com

Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.

30-4000 MHz SILICON GERMANIUM Gain Block

BGS3

 Single Fixed 3V supply

 No Dropping Resistor Required

 No matching circuit needed

 Lead-free/Green/RoHS compliant SOT-363 package

 Application: Driver Amplifier, Cellular, PCS, GSM,

UMTS, WCDMA, Wireless Data

BeRex’s BGS3 is a high SiGe HBT MMIC am-

plifier, internally matched to 50 Ohms with-

out the need for external components. De-

signed to run directly from a 3V supply. The

BGS3 is designed for high linearity 3V gain

block applications . It is packaged in a RoHS-

compliant with SOT-363 surface mount

package.

Product Description

Device Features

 Driver Amplifier

 Cellular, PCS, GSM, UMTS, WCDMA

Applications

Applications Circuit

*C1, C2, C3 =100 pF ± 5%; C4 = 1000 pF ± 5%; C5 = 10uF; **L1 = 56nH

1 Device performance _ measured on a BeRex evaluation board at 25°C, 50 Ω system.

2 OIP3 _ measured with two tones at an output of 0 dBm per tone separated by 1 MHz.

Typical Performance

1

Absolute Maximum Ratings

Min.

Typical

Max.

Unit

Bandwidth

50

4000

MHz

IC @ (Vc = 3V)

48

55

62

mA

VC

3.0

V

dG/dT

-0.006

dB/°C

RTH

130

°C/W

Parameter

Unit

Rating

Operating Case Temperature

°C

-40 to +85

Storage Temperature

°C

-55 to +155

Junction Temperature

°C

150

Operating Voltage

V

+3.3

Supply Current

mA

110

Input RF Power

dBm

12

Operation of this device above any of these parameters may result in permanent damage.

**less than 56nH improves RF performance at over 0.9GHz.

*820nH or higher value L1 improves RF performance at under

*Optimum value of L1 may vary with board design.

BGS3

L1

C1

C3

C4

RFin

RFout

C5

+3V

C2

*C1,C2=2000pF, L1=820nH for 50MHz application.

BS3

X

IN

GND

OUT

GND

Pin Description

RF IN

3

RF OUT

6

GND

1,2,4,5

Part Marking (X: Wafer number)

Application Circuit Values Example

Freq.

50~900MHz

900MHz ~ 3GHz

3GHz ~ 4GHz

C1/C2

2nF

100pF

10pF

L1

820nH

56nH

12nH

(1608 Chip Ind.)

Parameter

Frequency

Unit

70

900

1900

2450

3500

MHz

Gain

28

25.4

21.6

20

17.2

dB

S11

-17

-20

-14.5

dB

S22

-14

-16

-18.9

dB

OIP3

2

30.5

28.5

27.2

dBm

P1dB

16.7

17.4

16.9

16

14.5

dBm

Noise Figure

1.8

1.7

1.8

1.9

2

dB

*C1,C2=10pF, L1=12nH for 3.5GHz application.

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