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RM2Z Datasheet(PDF) 1 Page - Diode Semiconductor Korea

Part # RM2Z
Description  PLASTIC SILICON RECTIFIER
PDF  2 Pages
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Manufacturer  DSK [Diode Semiconductor Korea]
Direct Link  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

RM2Z Datasheet(HTML) 1 Page - Diode Semiconductor Korea

  RM2Z Datasheet HTML 1Page - Diode Semiconductor Korea RM2Z Datasheet HTML 2Page - Diode Semiconductor Korea  
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FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
and similar solvents
MECHANICAL DATA
Case:JEDEC DO--15L,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.017 ounces,0.48 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RM2A
RM2B
RM2C
UNITS
Maximum recurrent peak reverse voltage
VRRM
600
800
1000
V
Maximum RMS voltage
VRMS
420
560
700
V
Maximum DC blocking voltage
VDC
600
800
1000
V
Maximum average forw ard rectified current
9.5mm lead lengths,
@T
A=75
Peak f orw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
j=125
Maximum instantaneous forw ard voltage
at 1.2 A
VF
V
Maximum reverse current
@T
A=25
at rated DC blocking voltage
@T
A=100
Typical junction capacitance
(Note1)
CJ
pF
Typical thermal resistance
(Note2)
RθjA
/W
Operating junction temperature range
Tj
Storage temperature range
TSTG
RM2Z(Z)---RM2C(Z)
DO - 15L
200
140
200
RM2Z
Easily cleaned with Freon,Alcohol,Isopropanol
400
280
VOLTAGE RANGE: 200 --- 1000 V
CURRENT: 1.2 A
A
IFSM
2. Thermal resistance f rom junction to ambient.
A
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
- 55 ---- + 150
- 55 ---- + 150
30
50
IR
100
10.0
50
0.91
1.2
A
PLASTIC SILICON RECTIFIER
I(AV)
The plastic material carries U/L recognition 94V-0
400
RM2
Dimensions in millimeters
Diode Semiconductor Korea
www.diode.kr


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