mA

F

2

3

T =100 C

J

O

T =25 C

J

O

1

10

10

10

10

10

-2

-1

V

0

1

2V

200

100

0

0

300

400

500

600

700

800

900

1000

mW

25

100

175 200℃

0.3

0.1

0.2

tp

n=0

I

0.1

10

10

10

1

10

100

10

1

10S

FRM

V=tp/T

T=1/tp

tp

T

I

FRM

I

-5

-3

-2

-1

FIG.3-ADMISSIBLE REPETITIVE PEAK FORWORD CURRENT VERSUS PULSE DURATION

LL4148

FIG.1 -- ADMISSIBLE POWER DISSIPATION VERSUS

AMBIENT TEMPERATURE

FIG.2-- FORWARD CHARACTERISTICS

www.diode.kr

Diode Semiconductor Korea