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M8050 Datasheet(PDF) 2 Page - Diode Semiconductor Korea

Part # M8050
Description  Silicon Epitaxial Planar Transistor
PDF  4 Pages
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Manufacturer  DSK [Diode Semiconductor Korea]
Direct Link  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

M8050 Datasheet(HTML) 2 Page - Diode Semiconductor Korea

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Silicon Epitaxial Planar Transistor
M8050
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=0.1mA,IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
6
V
Collector cut-off current
ICBO
VCB=35V,IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=20V,IB=0
0.1
μA
DC current gain
hFE
VCE=1V,IC=5mA
VCE=1V,IC=100mA
VCE=1V,IC=800mA
45
80
40
300
Collector-emitter saturation voltage
VCE(sat)
IC=800mA, IB=80mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB=80mA
1.2
V
Transition frequency
fT
VCE=6V, IC= 20mA
f=30MHz
150
MHz
CLASSIFICATION OF hFE(1)
Rank
L
H
Range
80-200
200-300
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
www.diode.kr
Diode Semiconductor Korea



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