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M8050 Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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M8050 Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 4 page ![]() Silicon Epitaxial Planar Transistor M8050 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 V Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA Collector cut-off current ICEO VCE=20V,IB=0 0.1 μA DC current gain hFE VCE=1V,IC=5mA VCE=1V,IC=100mA VCE=1V,IC=800mA 45 80 40 300 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V Transition frequency fT VCE=6V, IC= 20mA f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank L H Range 80-200 200-300 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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