A92 datasheet(2/4 Pages) BWTECH

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A92

PNP Silicon Epitaxial Planar Transistor

Publication Order Number: [A92]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute maximum ratings (Ta=25°C)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-300

VCEO

Collector-Emitter Voltage

-300

VEBO

Emitter-Base Voltage

-5

Collector Current -Continuous

-0.5

Collector Power Dissipation

500

Tj,Tstg

Junction and Storage Temperature

-55 to 150

°C

ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

MIN

TYP

MAX

UNIT

V(BR)CBO

Collector-base breakdown voltage

IC = -100μA , IE = 0

-300

V(BR)CEO

Collector-emitter breakdown voltage

IC = -1 mA , IB = 0

-300

V(BR)EBO

Emitter-base breakdown voltage

IE = -100μA , IC = 0

-5

ICBO

Collector cut-off current

VCB = -200 V , IB = 0

-0.25

μA

IEBO

Emitter cut-off current

VEB = -3 V , IC = 0

-0.1

μA

hFE

DC current gain

VCE = -10 V , IC = -1 mA

VCE = -10 V , IC = -10 mA

100

300

VCE = -10 V , IC = -30 mA

VCE(sat)

Collector-emitter saturation voltage

IC = -20 mA , IB = -2 mA

-0.5

VBE(sat)

Base-emitter saturation voltage

IC = -20 mA , IB = -2 mA

-0.9

Transition frequency

VCE = -20 V , IC = -10 mA

f = 100MHz

MHz

Cob

Collector output capacitance

VCB= -20V , IE = 0

f = 1MHz

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