 2015 Microchip Technology Inc.

DS20005461A-page 3

HV583

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Rating†

Operating Junction Temperature.............................................................................................................-25°C to +125°C

Storage Temperature ..............................................................................................................................-40°C to +150°C

†Notice:

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in

the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may

affect device reliability. Device is ESD sensitive. Use appropriate ESD precautions.

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Min.

Typ.

Max.

Units

Conditions

High-Voltage Supply

15

-

80

V

Low-Voltage Supply

4.5

5.0

5.5

V

-30

-

30

mA

SR

-

-

8.0

V/μs

Clock Frequency

-

-

40

MHz

Data Read

-

-

25

MHz

Cascaded Devices

TABLE 1-1:

POWER SEQUENCES

Sequence Type

Steps

Power- Up Sequence

1.

Connect Ground.

2.

3.

Set All Inputs (Data, CLK, etc.) to a known state.

4.

Power- Down Sequence

Repeat the Power-Up sequence in reverse order.

DC ELECTRICAL CHARACTERISTICS

Electrical specifications

Parameter

Symbol

Min.

Typ.

Max.

Units

Conditions

——

10

μA

——

10

μA

High-Level Output Voltage

73

76

—

V

10

—

—

Output P-Channel Body Diode

—

—

81.5

(Note 1)

Low-Level Output Voltage

—3.0

6.0

V

Output N-Channel Body Diode

-1.5

—

—

V

Note 1:

Specification is for design guidance only.